| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STP18N55M5
MOSFET N-CH 550V 16A TO220AB
STMicroelectronics
|
7,385 | 3.46000 | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 16A (Tc) | 10V | 192mOhm @ 8A, 10V | 5V @ 250µA | 31 nC @ 10 V | ±25V | 1260 pF @ 100 V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
FQA30N40
MOSFET N-CH 400V 30A TO3PN
onsemi
|
6,732 | 3.72910 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 30A (Tc) | 10V | 140mOhm @ 15A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±30V | 4400 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 | Details |
|
SI1403BDL-T1-E3
MOSFET P-CH 20V 1.4A SC70-6
Vishay Siliconix
|
2,344 | 0.55000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.4A (Ta) | 2.5V, 4.5V | 150mOhm @ 1.5A, 4.5V | 1.3V @ 250µA | 4.5 nC @ 4.5 V | ±12V | - | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 | Details |
|
EKV550
MOSFET N-CH 50V 50A TO220
Sanken
|
1,440 | 1.24410 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 50 V | 50A (Ta) | 10V | 15mOhm @ 25A, 10V | 4.2V @ 250µA | - | ±20V | 2000 pF @ 10 V | - | 85W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
SIR440DP-T1-GE3
MOSFET N-CH 20V 60A PPAK SO-8
Vishay Siliconix
|
9,978 | 2.11000 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 4.5V, 10V | 1.55mOhm @ 20A, 10V | 2.5V @ 250µA | 150 nC @ 10 V | ±20V | 6000 pF @ 10 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | Details |
|
SPA07N60C3XKSA1
MOSFET N-CH 650V 7.3A TO220-FP
Infineon Technologies
|
6,461 | 3.12000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 250µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 | TO-220-3 Full Pack | Details |
|
PJQ4464AP-AU_R2_000A1
60V N-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
4,500 | 0.84000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.3A (Ta), 33A (Tc) | 4.5V, 10V | 17mOhm @ 16A, 10V | 2.5V @ 250µA | 13.5 nC @ 4.5 V | ±20V | 1574 pF @ 25 V | - | 2.4W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN | Details |
|
TK4R3A06PL,S4X
MOSFET N-CH 60V 68A TO220SIS
Toshiba Semiconductor and Storage
|
1,841 | 1.40000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 68A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2 nC @ 10 V | ±20V | 3280 pF @ 30 V | - | 36W (Tc) | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack | Details |
|
RFD16N05_NL
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
|
1,435 | 0.64000 | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 16A (Tc) | 10V | 47mOhm @ 16A, 10V | 4V @ 250µA | 80 nC @ 20 V | ±20V | 900 pF @ 25 V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
DMTH6016LFVW-7
MOSFET N-CH 60V 41A POWERDI3333
Diodes Incorporated
|
7,382 | 0.26800 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 41A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2.5V @ 250µA | 15.1 nC @ 10 V | ±20V | 939 pF @ 30 V | - | 1.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN | Details |
|
TJ80S04M3L,LXHQ
MOSFET P-CH 40V 80A DPAK
Toshiba Semiconductor and Storage
|
9,952 | 1.73000 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Ta) | 6V, 10V | 5.2mOhm @ 40A, 10V | 3V @ 1mA | 158 nC @ 10 V | +10V, -20V | 7770 pF @ 10 V | - | 100W (Tc) | 175°C | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
ZXMN3A01FQTA
MOSFET BVDSS: 25V~30V SOT23 T&R
Diodes Incorporated
|
9,107 | 0.25390 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.8A (Ta) | 4.5V, 10V | 120mOhm @ 2.5A, 10V | 2.5V @ 250µA | 3.9 nC @ 10 V | ±20V | 190 pF @ 25 V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | Details |
|
NDF04N60ZH
MOSFET N-CH 600V 4.8A TO220FP
onsemi
|
140,928 | 0.28000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.8A (Tc) | 10V | 2Ohm @ 2A, 10V | 4.5V @ 50µA | 29 nC @ 10 V | ±30V | 640 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-2 Full Pack | TO-220-3 Full Pack | Details |
|
FDD5N50FTM
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
|
3,291 | 0.70000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.5A (Tc) | 10V | 1.55Ohm @ 1.75A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 650 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
AO4292E
MOSFET N-CH 100V 8A 8SOIC
Alpha & Omega Semiconductor Inc.
|
1,137 | 0.37960 | Active | - | - | - | 8A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | Details |
|
PMPB08R5XNX
PMPB08R5XN/SOT1220-2/DFN2020M-
Nexperia USA Inc.
|
3,570 | 0.52000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 1.8V, 4.5V | 10mOhm @ 11A, 4.5V | 1V @ 250µA | 30 nC @ 4.5 V | ±12V | 1774 pF @ 15 V | - | 1.9W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020M-6 | 6-UDFN Exposed Pad | Details |
|
BUK9628-55A,118
N-CHANNEL TRENCHMOS LOGIC LEVEL
Nexperia USA Inc.
|
9,412 | 0.30000 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4.5V, 5V | 25mOhm @ 15A, 10V | 2V @ 1mA | - | ±10V | 1725 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
STB22N60DM6
MOSFET N-CH 600V 15A D2PAK
STMicroelectronics
|
2,630 | 2.16420 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 240mOhm @ 7.5A, 10V | 4.75V @ 250µA | 20.6 nC @ 10 V | ±25V | 800 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
SPD04N60C3ATMA1
MOSFET N-CH 600V 4.5A TO252-3
Infineon Technologies
|
4,888 | 2.28000 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
FQP27N25
MOSFET N-CH 250V 25.5A TO220-3
onsemi
|
5,561 | 1.31250 | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 250 V | 25.5A (Tc) | 10V | 110mOhm @ 12.75A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
IPB80N03S4L-03
IPB80N03 - 20V-40V N-CHANNEL AUT
Infineon Technologies
|
1,000 | 0.81000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.7mOhm @ 80A, 10V | 2.2V @ 45µA | 75 nC @ 10 V | ±16V | 5100 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
TSM7NC65CF C0G
MOSFET N-CH 650V 7A ITO220S
Taiwan Semiconductor Corporation
|
5,714 | 1.68000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 1.35Ohm @ 2A, 10V | 4.5V @ 250µA | 24 nC @ 10 V | ±30V | 1169 pF @ 50 V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack | Details |
|
IPD100N06S403ATMA2
MOSFET N-CH 60V 100A TO252-3-11
Infineon Technologies
|
1,644 | 2.58000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 90µA | 128 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
SIHP17N80E-GE3
MOSFET N-CH 800V 15A TO220AB
Vishay Siliconix
|
6,534 | 2.87270 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2408 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
Submit your RFQ and our team will source it for you.