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SI4483ADY-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SI4483ADY-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 19.2A 8SO

SI4483ADY-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 30V 19.2A 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 24,820

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C19.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.9W (Ta), 5.9W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

Frequently Asked Questions

SI4483ADY-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 30V 19.2A 8SO

The mounting type of SI4483ADY-T1-GE3 is Surface Mount.

The operating temperature range of SI4483ADY-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI4483ADY-T1-GE3 is 8-SOIC (0.154", 3.90mm Width).

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