| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDMS8860AS
N-CHANNEL POWERTRENCH MOSFET
Fairchild Semiconductor
|
6,000 | 0.29000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
SIZ918DT-T1-GE3
MOSFET 2N-CH 30V 16A POWERPAIR
Vishay Siliconix
|
9,519 | 1.31000 | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 16A, 28A | 12mOhm @ 13.8A, 10V | 2.2V @ 250µA | 21nC @ 10V | 790pF @ 15V | 29W, 100W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PowerPair® (6x5) | Details |
|
SI4936ADY-T1-GE3
MOSFET 2N-CH 30V 4.4A 8-SOIC
Vishay Siliconix
|
3,981 | 1.05600 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.4A | 36mOhm @ 5.9A, 10V | 3V @ 250µA | 20nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
DMN3061SVT-13
MOSFET 25V~30V TSOT26
Diodes Incorporated
|
7,483 | 0.13030 | Active | 2 N-Channel (Dual) | Standard | 30V | 3.4A (Ta) | 60mOhm @ 3.1A, 10V | 1.8V @ 250µA | 6.6nC @ 10V | 278pF @ 15V | 880mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | Details |
|
DMN1029UFDB-7
MOSFET 2N-CH 12V 5.6A 6UDFN
Diodes Incorporated
|
930 | 0.50000 | Active | 2 N-Channel (Dual) | Standard | 12V | 5.6A | 29mOhm @ 5A, 4.5V | 1V @ 250µA | 19.6nC @ 8V | 914pF @ 6V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
SI4564DY-T1-GE3
MOSFET N/P-CH 40V 10A 8SOIC
Vishay Siliconix
|
7,542 | 1.45000 | Active | N and P-Channel | Logic Level Gate | 40V | 10A, 9.2A | 17.5mOhm @ 8A, 10V | 2V @ 250µA | 31nC @ 10V | 855pF @ 20V | 3.1W, 3.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
TC7920K6-G
MOSFET 2N/2P-CH 200V 12VDFN
Microchip Technology
|
9,724 | 1.95800 | Active | 2 N and 2 P-Channel | Standard | 200V | - | 10Ohm @ 1A, 10V | 2.4V @ 1mA | - | 52pF @ 25V | - | -55°C ~ 150°C (TJ) | Surface Mount | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Details |
|
FDB12N50FTM
MOSFET N-CH 500V 11.5A D2PAK
Fairchild Semiconductor
|
1,022 | 0.87000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
APTM20AM04FG
MOSFET 2N-CH 200V 372A SP6
Microchip Technology
|
48 | 343.18000 | Active | 2 N-Channel (Half Bridge) | Standard | 200V | 372A | 5mOhm @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | 28900pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 | Details |
|
CSD88584Q5DC
MOSFET 2 N-CH 40V 22-VSON-CLIP
Texas Instruments
|
2,421 | 4.17000 | Active | 2 N-Channel (Half Bridge) | Standard | 40V | - | 0.95mOhm @ 30A, 10V | 2.3V @ 250µA | 88nC @ 4.5V | 12400pF @ 20V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 22-PowerTFDFN | 22-VSON-CLIP (5x6) | Details |
|
EMH2604-TL-H
MOSFET N/P-CH 20V 4A/3A EMH8
onsemi
|
102,000 | 0.25000 | Obsolete | N and P-Channel | Logic Level Gate | 20V | 4A, 3A | 45mOhm @ 4A, 4.5V | - | 4.7nC @ 4.5V | 345pF @ 10V | 1.2W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-EMH | Details |
|
MCH6663-TL-W
MOSFET N/P-CH 30V 1.8/1.5A MCPH6
onsemi
|
1,972 | 0.51000 | Obsolete | N and P-Channel | Logic Level Gate, 4V Drive | 30V | 1.8A, 1.5A | 188mOhm @ 900mA, 10V | 2.6V @ 1mA | 2nC @ 10V | 88pF @ 10V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88FL/MCPH6 | Details |
|
SQJ914EP-T1_GE3
MOSFET 2 N-CH 30V POWERPAK SO8
Vishay Siliconix
|
5,046 | 1.37000 | Active | 2 N-Channel (Dual) | Standard | 30V | 30A (Tc) | 12mOhm @ 4.5A, 10V | 2.5V @ 250µA | 25nC @ 10V | 1110pF @ 15V | 27W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
|
SMA5133
MOSFET 3N/3P-CH 500V 2.5A 12-SIP
Sanken
|
87 | 3.71000 | Active | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | 500V | 2.5A | - | - | - | - | - | - | Through Hole | 12-SIP | 12-SIP | Details |
|
EPC2221
TRANS GAN DUAL 100V.11OHM 9BMPD
EPC
|
9,782 | 2.73000 | Active | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 100V | 5A | - | - | - | - | - | 150°C (TJ) | Surface Mount | Die | Die | Details |
|
DMP2100UFU-13
MOSFET 2P-CH 20V U-DFN2030-6
Diodes Incorporated
|
9,853 | 0.16800 | Active | 2 P-Channel (Dual) | Standard | 20V | 5.7A | 38mOhm @ 3.5A, 10V | 1.4V @ 250µA | 21.4nC @ 10V | 906pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2030-6 (Type B) | Details |
|
SI7232DN-T1-GE3
MOSFET 2N-CH 20V 25A PPAK 1212-8
Vishay Siliconix
|
5,239 | 0.95000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 25A | 16.4mOhm @ 10A, 4.5V | 1V @ 250µA | 32nC @ 8V | 1220pF @ 10V | 23W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | Details |
|
AON5820
MOSFET 2N-CH 20V 10A 6DFN
Alpha & Omega Semiconductor Inc.
|
3,217 | 0.29100 | Active | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 10A | 9.5mOhm @ 10A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 1510pF @ 10V | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 6-WFDFN Exposed Pad | 6-DFN-EP (2x5) | Details |
|
DMC2025UFDBQ-7
MOSFET BVDSS: 8V~24V U-DFN2020-6
Diodes Incorporated
|
3,760 | 0.14230 | Active | N and P-Channel Complementary | Standard | 20V | 6A (Ta), 3.5A (Ta) | 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V | 1V @ 250µA, 1.4V @ 250µA | 12.3nC @ 10V, 15nC @ 8V | 486pF @ 10V, 642pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
IPA60R600E6
600V, 0.6OHM, N-CHANNEL, MOSFET
Infineon Technologies
|
640 | 0.81000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
IRF7105TRPBF
MOSFET N/P-CH 25V 8-SOIC
Infineon Technologies
|
4,939 | 0.86000 | Active | N and P-Channel | Standard | 25V | 3.5A, 2.3A | 100mOhm @ 1A, 10V | 3V @ 250µA | 27nC @ 10V | 330pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
DMG4822SSD-13
MOSFET 2N-CH 30V 10A 8SO
Diodes Incorporated
|
8,237 | 0.70000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 10A | 20mOhm @ 8.5A, 10V | 3V @ 250µA | 10.5nC @ 10V | 478.9pF @ 16V | 1.42W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
DMC25D0UVT-7
MOSFET N/P-CH 25V/30V TSOT26
Diodes Incorporated
|
5,303 | 0.46000 | Active | N and P-Channel | Standard | 25V, 30V | 400mA, 3.2A | 4Ohm @ 400mA, 4.5V | 1.5V @ 250µA | 0.7nC @ 8V | 26.2pF @ 10V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-23-6 | Details |
|
IPG16N10S461AATMA1
MOSFET 2N-CH 100V 16A 8TDSON
Infineon Technologies
|
1,753 | 0.63080 | Active | 2 N-Channel (Dual) | Standard | 100V | 16A | 61mOhm @ 16A, 10V | 3.5V @ 9µA | 7nC @ 10V | 490pF @ 25V | 29W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 | Details |
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