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DMG5802LFX-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays

DMG5802LFX-7

Diodes Incorporated

MOSFET 2N-CH 24V 6.5A 6DFN

DMG5802LFX-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 24V 6.5A 6DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-VFDFN Exposed Pad, power - max 980mW.

In Stock: 3,039

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C6.5A
Rds On (Max) @ Id, Vgs15mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1066.4pF @ 15V
Power - Max980mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-VFDFN Exposed Pad
Supplier Device PackageW-DFN5020-6

Frequently Asked Questions

DMG5802LFX-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 24V 6.5A 6DFN

The mounting type of DMG5802LFX-7 is Surface Mount.

The operating temperature range of DMG5802LFX-7 is -55°C ~ 150°C (TJ).

The package type of DMG5802LFX-7 is 6-VFDFN Exposed Pad.

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