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SQJ990EP-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SQJ990EP-T1_GE3

Vishay Siliconix

MOSFET 2 N-CH 100V POWERPAK SO8

SQJ990EP-T1_GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2 N-CH 100V POWERPAK SO8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 48W.

In Stock: 9,268

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V, 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1390pF @ 25V, 650pF @ 25V
Power - Max48W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual Asymmetric

Frequently Asked Questions

SQJ990EP-T1_GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2 N-CH 100V POWERPAK SO8

The mounting type of SQJ990EP-T1_GE3 is Surface Mount.

The operating temperature range of SQJ990EP-T1_GE3 is -55°C ~ 175°C (TJ).

The package type of SQJ990EP-T1_GE3 is PowerPAK® SO-8 Dual.

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