| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDML7610S
MOSFET 2N-CH 30V 12A/17A 8MLP
onsemi
|
2,448 | 1.93000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 12A, 17A | 7.5mOhm @ 12A, 10V | 3V @ 250µA | 28nC @ 10V | 1750pF @ 15V | 800mW, 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (3x4.5) | Details |
|
DMN3022LFG-7
MOSFET BVDSS: 25V-30V POWERDI333
Diodes Incorporated
|
8,446 | 0.42800 | Active | 2 N-Channel (Dual) | Standard | 30V | 7.6A (Ta), 15A (Tc) | 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V | 2.1V @ 250µA, 1.2V @ 250µA | 3.7nC @ 4.5V, 8nC @ 4.5V | 481pF @ 15V, 996pF @ 15V | 1.96W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PowerDI3333-8 (Type D) | Details |
|
EPC2100ENGRT
GANFET 2 N-CH 30V 9.5A/38A DIE
EPC
|
1,156 | 5.18320 | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | Details |
|
FF08MR12W1MA1B11ABPSA1
EASY PACK
Infineon Technologies
|
36 | 410.40000 | Active | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 150A (Tj) | 9.8mOhm @ 150A, 15V | 5.55V @ 90mA | 15V | 600V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1BM-2 | Details |
|
PMV27UPEA,215
4.5A, 20V, P CHANNEL, SILICON, M
Nexperia USA Inc.
|
3,155 | 0.10000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
CSD75204W15
MOSFET 2P-CH 3A 9DSBGA
Texas Instruments
|
5,135 | 0.33000 | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | - | 3A | - | 900mV @ 250µA | 3.9nC @ 4.5V | 410pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, DSBGA | 9-DSBGA | Details |
|
BSO4804HUMA2
MOSFET 2 N-CH 30V 8A DSO8
Infineon Technologies
|
5,000 | 0.21000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A (Ta) | 20mOhm @ 8A, 10V | 2V @ 30µA | 17nC @ 5V | 870pF @ 25V | 2W | -55°C ~ 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 | Details |
|
AUIRF7342QTR
MOSFET 2P-CH 55V 3.4A 8SOIC
Infineon Technologies
|
7,160 | 3.51000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
NTGD3133PT1G
MOSFET 2P-CH 20V 1.6A 6TSOP
onsemi
|
9,000 | 0.28000 | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 1.6A | 145mOhm @ 2.2A, 4.5V | 1.4V @ 250µA | 5.5nC @ 4.5V | 400pF @ 10V | 560mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | Details |
|
DMN3013LDG-7
MOSFET BVDSS: 25V-30V POWERDI333
Diodes Incorporated
|
3,972 | 0.37380 | Active | 2 N-Channel (Dual) | Standard | 30V | 9.5A (Ta), 15A (Tc) | 14.3mOhm @ 4A, 8V | 1.2V @ 250µA | 5.7nC @ 4.5V | 600pF @ 15V | 2.16W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PowerDI3333-8 (Type D) | Details |
|
NTMC1300R2
MOSFET N/P-CH 30V 8SOIC
onsemi
|
20,000 | 0.25000 | Obsolete | N and P-Channel | Logic Level Gate | 30V | 2.2A, 1.8A | 90mOhm @ 3A, 10V | 2.2V @ 250µA | 5nC @ 4.5V | 300pF @ 20V | 2W | -65°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SIS932EDN-T1-GE3
MOSFET N-CH DL 30V PWRPAK 1212-8
Vishay Siliconix
|
5,625 | 0.68000 | Active | 2 N-Channel (Dual) | Standard | 30V | 6A (Tc) | 22mOhm @ 10A, 4.5V | 1.4V @ 250µA | 14nC @ 4.5V | 1000pF @ 15V | 2.6W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | Details |
|
DMP2110UFDBQ-13
MOSFET BVDSS: 8V~24V U-DFN2020-6
Diodes Incorporated
|
9,587 | 0.12630 | Active | 2 P-Channel (Dual) | Standard | 20V | 3.2A (Ta) | 75mOhm @ 2.8A, 4.5V | 1V @ 250µA | 12.7nC @ 8V | 443pF @ 10V | 820mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
SI4340CDY-T1-E3
MOSFET 2N-CH 20V 14.1A 14-SOIC
Vishay Siliconix
|
612 | 1.35000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 14.1A, 20A | 9.4mOhm @ 11.5A, 10V | 3V @ 250µA | 32nC @ 10V | 1300pF @ 10V | 3W, 5.4W | -55°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC | Details |
|
APTM08TAM04PG
MOSFET 6N-CH 75V 120A SP6-P
Microchip Technology
|
5,580 | 153.77500 | Active | 6 N-Channel (3-Phase Bridge) | Standard | 75V | 120A | 4.5mOhm @ 60A, 10V | 4V @ 1mA | 153nC @ 10V | 4530pF @ 25V | 138W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P | Details |
|
ALD1106PBL
MOSFET 4N-CH 10.6V 14DIP
Advanced Linear Devices Inc.
|
769 | 5.80000 | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP | Details |
|
DMG1024UV-7
MOSFET 2N-CH 20V 1.38A SOT563
Diodes Incorporated
|
9,647 | 0.44000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.38A | 450mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.74nC @ 4.5V | 60.67pF @ 16V | 530mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 | Details |
|
NDS9936
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
|
50,546 | 0.54000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5A | 50mOhm @ 5A, 10V | 3V @ 250µA | 35nC @ 10V | 525pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
NX138AKSX
MOSFET 2 N-CH 60V 170MA 6TSSOP
Nexperia USA Inc.
|
1,499 | 0.36000 | Active | 2 N-Channel (Dual) | Standard | 60V | 170mA (Ta) | 4.5Ohm @ 170mA, 10V | 1.5V @ 250µA | 1.4nC @ 10V | 20pF @ 30V | 325mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP | Details |
|
PJQ5866A_R2_00001
60V DUAL N-CHANNEL ENHANCEMENT M
Panjit International Inc.
|
8,437 | 0.91000 | Active | 2 N-Channel (Dual) | Standard | 60V | 7A (Ta), 40A (Tc) | 17mOhm @ 20A, 10V | 2.5V @ 250µA | 13.5nC @ 4.5V | 1574pF @ 25V | 1.7W (Ta), 56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | DFN5060B-8 | Details |
|
TSM076NH04LDCR RLG
40V, 34A, DUAL N-CHANNEL POWER M
Taiwan Semiconductor Corporation
|
1,654 | 2.64000 | Active | 2 N-Channel (Dual) | Standard | 40V | 14A (Ta), 34A (Tc) | 7.6mOhm @ 17A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | 1344pF @ 25V | 55.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFNU (5x6) | Details |
|
DMP2240UDM-7
MOSFET 2P-CH 20V 2A SOT-26
Diodes Incorporated
|
9,024 | 0.46000 | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2A | 150mOhm @ 2A, 4.5V | 1V @ 250µA | - | 320pF @ 16V | 600mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | Details |
|
FDR8308P
SMALL SIGNAL P-CHANNEL MOSFET
Fairchild Semiconductor
|
18,650 | 0.29000 | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.2A | 50mOhm @ 3.2A, 4.5V | 1.5V @ 250µA | 19nC @ 4.5V | 1240pF @ 10V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSOP (0.130", 3.30mm Width) | SuperSOT™-8 | Details |
|
SQJ914EP-T1_BE3
DUAL N-CHANNEL 30-V (D-S) 175C M
Vishay Siliconix
|
1,908 | 1.37000 | Active | 2 N-Channel (Dual) | Standard | 30V | 30A (Tc) | 12mOhm @ 4.5A, 10V | 2.5V @ 250µA | 25nC @ 10V | 1110pF @ 15V | 27W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | Details |
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