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SIS932EDN-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SIS932EDN-T1-GE3

Vishay Siliconix

MOSFET N-CH DL 30V PWRPAK 1212-8

SIS932EDN-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N-CH DL 30V PWRPAK 1212-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8 Dual, power - max 2.6W (Ta), 23W (Tc).

In Stock: 5,625

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
Power - Max2.6W (Ta), 23W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

Frequently Asked Questions

SIS932EDN-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N-CH DL 30V PWRPAK 1212-8

The mounting type of SIS932EDN-T1-GE3 is Surface Mount.

The operating temperature range of SIS932EDN-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SIS932EDN-T1-GE3 is PowerPAK® 1212-8 Dual.

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