| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ZLLS500QTA
DIODE SCHOTTKY 40V 700MA SOT23
Diodes Incorporated
|
5,639 | 0.62000 | Active | Schottky | 40 V | 700mA | 530 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 3 ns | 10 µA @ 30 V | 16pF @ 30V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) | Details |
|
DSS16-01AS-TUB
DIODE SCHOTTKY 100V 16A TO263AB
IXYS
|
17 | 2.66000 | Active | Schottky | 100 V | 16A | 790 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AA | -55°C ~ 175°C | Details |
|
SB140-T
DIODE SCHOTTKY 40V 1A DO41
Diodes Incorporated
|
5,998 | 0.11080 | Active | Schottky | 40 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C | Details |
|
SR510 A0G
DIODE SCHOTTKY 100V 5A DO201AD
Taiwan Semiconductor Corporation
|
2,704 | 0.96000 | Active | Schottky | 100 V | 5A | 850 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C | Details |
|
VS-16EDH02HM3/I
DIODE GEN PURP 200V 16A TO263AC
Vishay General Semiconductor - Diodes Division
|
1,666 | 1.56000 | Active | Standard | 200 V | 16A | 1 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 32 ns | 15 µA @ 200 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -40°C ~ 150°C | Details |
|
IDD03SG60CXTMA1
DIODE SCHOTTKY 600V 3A TO252-3
Infineon Technologies
|
78,768 | 1.14000 | Discontinued at Digi-Key | Silicon Carbide Schottky | 600 V | 3A (DC) | 2.3 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C | Details |
|
MCL103A-TR
DIODE SCHOTTKY 40V 200MA MICMELF
Vishay General Semiconductor - Diodes Division
|
6,479 | 0.41000 | Active | Schottky | 40 V | 200mA | 600 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 10 ns | 5 µA @ 10 V | 50pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | MicroMELF | 125°C (Max) | Details |
|
D1821SH45TPRXPSA1
DIODE GEN PURP 4.5KV 2210A
Infineon Technologies
|
6,485 | 2601.80000 | Active | Standard | 4500 V | 2210A | 3.6 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 4500 V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C | Details |
|
ES1C_R1_00001
SMA, SUPER
Panjit International Inc.
|
5,100 | 0.40000 | Active | Standard | 150 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 150 V | 7pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 150°C | Details |
|
ES1D_R1_00001
SMA, SUPER
Panjit International Inc.
|
2,125 | 0.36000 | Active | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 200 V | 7pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 150°C | Details |
|
RS1PD-M3/84A
DIODE GEN PURP 200V 1A DO220AA
Vishay General Semiconductor - Diodes Division
|
5,748 | 0.43000 | Active | Standard | 200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C | Details |
|
VS-1N1183A
DIODE GEN PURP 50V 40A DO203AB
Vishay General Semiconductor - Diodes Division
|
50 | 8.93000 | Active | Standard | 50 V | 40A | 1.3 V @ 126 A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5 mA @ 50 V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 200°C | Details |
|
GL1A
DIODE STD DO-213AA 50V 1A
Diotec Semiconductor
|
2,500 | 0.03430 | Active | Standard | 50 V | 1A | 1.2 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 50 V | - | Surface Mount | DO-213AA | DO-213AA, MINI-MELF | -50°C ~ 175°C | Details |
|
P1200D-CT
CUT-TAPE VERSION. STANDARD RECO
Diotec Semiconductor
|
1,421 | 2.09030 | Active | Standard | 200 V | 12A | 950 mV @ 12 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | Through Hole | P600, Axial | P600 | -50°C ~ 150°C | Details |
|
SF26G-TP
DIODE GPP SUPER FAST 2A DO-15
Micro Commercial Co
|
8,875 | 0.06600 | Active | Standard | 400 V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | - | 30pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 150°C | Details |
|
DSA12TL
RECTIFIER DIODE, 1.2A, 1000V
onsemi
|
46,300 | 0.84000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
STTH5R06B-TR
DIODE GEN PURP 600V 5A DPAK
STMicroelectronics
|
7,398 | 1.58000 | Active | Standard | 600 V | 5A | 2.9 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 20 µA @ 600 V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) | Details |
|
G5S06508HT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
Global Power Technology-GPT
|
5,116 | 5.68000 | Active | Silicon Carbide Schottky | 650 V | 20A (DC) | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 550pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C | Details |
|
VS-HFA04SD60STR-M3
DIODE GEN PURP 600V 4A D-PAK
Vishay General Semiconductor - Diodes Division
|
3,666 | 0.91250 | Active | Standard | 600 V | 4A | 1.8 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 3 µA @ 600 V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C | Details |
|
ER203_R2_00001
GLASS PASSIVATED SUPERFAST RECOV
Panjit International Inc.
|
1,763 | 0.45000 | Active | Standard | 300 V | 2A | 1.25 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 300 V | 22pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C | Details |
|
S3G-CT
CUT-TAPE VERSION. STANDARD RECO
Diotec Semiconductor
|
2,821 | 0.33170 | Active | Standard | 400 V | 3A | 1.15 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 400 V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -50°C ~ 150°C | Details |
|
VS-25F100
DIODE GEN PURP 1KV 25A DO203AA
Vishay General Semiconductor - Diodes Division
|
50 | 8.64000 | Active | Standard | 1000 V | 25A | 1.3 V @ 78 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 1000 V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C | Details |
|
HS1KL RUG
DIODE GEN PURP 800V 1A SUB SMA
Taiwan Semiconductor Corporation
|
4,488 | 0.25320 | Active | Standard | 800 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | 15pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C | Details |
|
MBR1645-E3/45
DIODE SCHOTTKY 45V 16A TO220AC
Vishay General Semiconductor - Diodes Division
|
8,826 | 1.17000 | Active | Schottky | 45 V | 16A | 630 mV @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 45 V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C | Details |
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