| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CSFA105-G
DIODE GEN PURP 600V 1A DO214AC
Comchip Technology
|
1,329 | 0.43000 | Active | Standard | 600 V | 1A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
|
EGP10K
DIODE GEN PURP 800V 1A DO204AL
onsemi
|
3,500 | 0.49000 | Active | Standard | 800 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C | Details |
|
NTE6091
R-SCHOTTKY 40A 45V DUAL
NTE Electronics, Inc
|
195 | 5.72000 | Active | Schottky | 45 V | 20A | 550 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 mA @ 45 V | - | Through Hole | TO-247-3 | TO-247 | -65°C ~ 250°C | Details |
|
8TQ080S
8A, 80V, D2PAK, SCHOTTKY RECTIFI
SMC Diode Solutions
|
706 | 0.93000 | Active | Schottky | 80 V | 8A | 750 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 80 V | 400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C | Details |
|
SA2M-E3/5AT
DIODE GEN PURP 1KV 2A DO214AC
Vishay General Semiconductor - Diodes Division
|
19,622 | 0.41000 | Active | Standard | 1000 V | 2A | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 3 µA @ 1000 V | 11pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
|
PMEG6020EPASX
DIODE SCHOTTKY 60V 2A SOT1061
Nexperia USA Inc.
|
5,765 | 0.48000 | Active | Schottky | 60 V | 2A | 575 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 5.5 ns | 250 µA @ 60 V | 250pF @ 1V, 1MHz | Surface Mount | 3-UDFN Exposed Pad | DFN2020D-3 | 150°C (Max) | Details |
|
NRVHP820LFST1G
RECTIFIER 200V 8A
onsemi
|
5,674 | 0.60300 | Active | Standard | 200 V | 8A | 1 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 200 V | - | Surface Mount | SOT-1023, 4-LFPAK | LFPAK4 (5x6) | -55°C ~ 175°C | Details |
|
NSVRB751V40T1G
DIODE SCHOTTKY 30V 30MA SOD323
onsemi
|
26,042 | 0.46000 | Active | Schottky | 30 V | 30mA (DC) | 370 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 500 nA @ 30 V | 2.5pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C | Details |
|
1N5393-AQ
DIODE STD DO-15 200V 1.5A
Diotec Semiconductor
|
4,000 | 0.12370 | Active | Standard | 200 V | 1.5A | 1.3 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 200 V | - | Through Hole | DO-204AC, DO-15, Axial | DO15/DO204AC | -50°C ~ 175°C | Details |
|
TSD3G
3A 400V ESD CAPABILITY RECTIFIER
Taiwan Semiconductor Corporation
|
3,306 | 1.44000 | Active | Standard | 400 V | 3A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 400 V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C | Details |
|
SBR02U100LPQ-7
DIODE SBR 100V 250MA 2DFN
Diodes Incorporated
|
9,201 | 0.26300 | Active | Super Barrier | 100 V | 250mA | 800 mV @ 200 mA | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 75 V | - | Surface Mount | 0402 (1006 Metric) | X1-DFN1006-2 | -65°C ~ 150°C | Details |
|
B360B-M3/5BT
DIODE SCHOTTKY 60V 3A DO214AA
Vishay General Semiconductor - Diodes Division
|
4,860 | 0.12400 | Active | Schottky | 60 V | 3A | 660 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C | Details |
|
UPS120/TR7
DIODE SCHOTTKY 20V 1A POWERMITE
Microchip Technology
|
1,562 | 0.54000 | Active | Schottky | 20 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 20 V | 80pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C | Details |
|
GS2Y-LTP
DIODE GP 1.6KV 1.5A DO214AC
Micro Commercial Co
|
22,227 | 0.35000 | Active | Standard | 1600 V | 1.5A | 1.15 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 5 µA @ 1600 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
|
NSR0170HT1G
DIODE SCHOTTKY 70V 70MA SOD323
onsemi
|
4,342 | 0.24000 | Active | Schottky | 70 V | 70mA (DC) | 730 mV @ 15 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 µA @ 70 V | - | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C | Details |
|
G3S06510A
SIC SCHOTTKY DIODE 650V 10A 2-PI
Global Power Technology-GPT
|
3,149 | 5.66000 | Active | Silicon Carbide Schottky | 650 V | 35A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 690pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C | Details |
|
BAV102,115
DIODE GEN PURP 150V 250MA LLDS
Nexperia USA Inc.
|
3,225 | 0.34000 | Active | Standard | 150 V | 250mA (DC) | 1.25 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 150 V | 5pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | LLDS; MiniMelf | 175°C (Max) | Details |
|
ERT3DAF_R1_00001
SURFACE MOUNT SUPER FAST RECOVER
Panjit International Inc.
|
4,617 | 0.56000 | Active | Standard | 200 V | 3A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 200 V | 50pF @ 4V, 1MHz | Surface Mount | DO-221AA, SMB Flat Leads | SMBF | -55°C ~ 150°C | Details |
|
CD214B-S3M
DIO RECT
Bourns Inc.
|
8,807 | 0.12760 | Active | Standard | 1000 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 23pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C | Details |
|
ER1DF_R1_00001
SURFACE MOUNT SUPER FAST RECOVER
Panjit International Inc.
|
2,782 | 0.46000 | Active | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 200 V | 20pF @ 4V, 1MHz | Surface Mount | DO-221AA, SMB Flat Leads | SMBF | -55°C ~ 150°C | Details |
|
1N5822
DIODE SCHOTTKY 40V 3A DO201AD
STMicroelectronics
|
16,536 | 0.48000 | Active | Schottky | 40 V | 3A | 525 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 mA @ 40 V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) | Details |
|
NTE125-10
NTE125(10/PKG)
NTE Electronics, Inc
|
5,815 | 7.36000 | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C | Details |
|
VS-50WQ06FNHM3
DIODE SCHOTTKY 60V 5.5A TO252AA
Vishay General Semiconductor - Diodes Division
|
8,137 | 1.95000 | Active | Schottky | 60 V | 5.5A | 570 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 60 V | 360pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C | Details |
|
1N3272R
DO9 275 AMP SILICON RECTIFIER
Solid State Inc.
|
10 | 21.00000 | Active | Standard, Reverse Polarity | 900 V | 275A | 1.3 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 75 µA @ 900 V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-9 | -65°C ~ 190°C | Details |
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