Transistors - JFETs | 3J LIMITED

Mfr Part #	Qty	Price	Product Status	FET Type	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
PN4118 TO-92 3L ULTRA HIGH INPUT IMPEDANCE N-CHA Linear Integrated Systems, Inc.	1,994	3.93000	Active	N-Channel	40 V	40 V	80 µA @ 10 V	50 mA	1 V @ 1 nA	3pF @ 10V	-	300 mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92	Details
2N4416A TO-72 4L WIDEBAND, HIGH GAIN, SINGLE, N- Linear Integrated Systems, Inc.	50	4.44000	Active	N-Channel	35 V	-	-	-	-	0.8pF @ 15V	-	300 mW	-55°C ~ 135°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72-4	Details
SST403 SOIC 8L LOW NOISE, LOW DRIFT, MONOLITHIC Linear Integrated Systems, Inc.	100	6.06000	Active	2 N-Channel	50 V	50 V	500 µA @ 10 V	-	500 mV @ 1 nA	8pF @ 15V	-	300 mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC	Details
2SK208-GR(TE85L,F) JFET N-CH 50V SC59 Toshiba Semiconductor and Storage	4,448	0.52000	Active	N-Channel	50 V	-	2.6 mA @ 10 V	6.5 mA	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	Details
NTE2937 JFET P-CHANNEL 30V TO-92 NTE Electronics, Inc	1,755	2.04000	Active	P-Channel	30 V	-	20 mA @ 15 V	-	5 V @ 10 nA	5.5pF @ 10V	85 Ohms	350 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92	Details
NTE466 JFET-N-CH CHOPPER/SW NTE Electronics, Inc	9,405	4.73000	Active	N-Channel	40 V	40 V	50 mA @ 15 V	-	4 V @ 500 pA	18pF @ 10V	25 Ohms	360 mW	-	Through Hole	TO-218-3	TO-218	Details
BSR57 JFET N-CH 40V 0.25W SOT-23 onsemi	15,534	0.42000	Active	N-Channel	40 V	-	20 mA @ 15 V	-	2 V @ 0.5 nA	-	40 Ohms	250 mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	Details
2N5564 TO-71 6L LOW NOISE, MONOLITHIC DUAL, N-CH Linear Integrated Systems, Inc.	111	9.99000	Active	2 N-Channel	40 V	-	7 mA @ 15 V	-	500 mV @ 2 mA	25pF @ 15V	50 Ohms	500 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-71-6 Metal Can	TO-71	Details
MQ2N5114 P-CHANNEL J-FET Microchip Technology	7,776	59.13000	Active	P-Channel	30 V	30 V	30 mA @ 18 V	-	10 V @ 1 nA	25pF @ 15V	75 Ohms	500 mW	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)	Details
2N2608 JFET Microchip Technology	3,918	77.35500	Active	P-Channel	30 V	-	1 mA @ 5 V	-	750 mV @ 1 µA	10pF @ 5V	-	300 mW	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)	Details
NTE312 JFET-N-CH VHF AMP/MIX NTE Electronics, Inc	1,138	1.80000	Active	N-Channel	30 V	-	5 mA @ 15 V	-	1 V @ 10 mA	4.5pF @ 15V	-	360 mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92	Details
2N4093UB/TR JFET Microchip Technology	2,971	48.34500	Active	N-Channel	40 V	40 V	8 mA @ 20 V	-	-	16pF @ 20V	80 Ohms	360 mW	-65°C ~ 175°C (TJ)	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)	Details
LS5911 SOIC 8L-B WIDEBAND, HIGH GAIN, MONOLITHIC Linear Integrated Systems, Inc.	10,012	9.50000	Active	2 N-Channel	25 V	-	7 mA @ 10 V	-	1 V @ 1 nA	5pF @ 10V	-	500 mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC	Details
J112 JFET N-CH 35V 625MW TO92 onsemi	8,512	0.48000	Active	N-Channel	35 V	-	5 mA @ 15 V	-	1 V @ 1 µA	-	50 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3	Details
2N5639RLRAG JFET N-CH 35V 0.31W TO92 onsemi	15,000	0.12000	Obsolete	N-Channel	35 V	30 V	25 mA @ 20 V	-	-	10pF @ 12V (VGS)	60 Ohms	310 mW	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-92 (TO-226)	Details
2SK2145-GR(TE85L,F MOSFET 2N-CH JFET 50V SMV Toshiba Semiconductor and Storage	1,868	0.71000	Active	2 N-Channel (Dual)	-	-	2.6 mA @ 10 V	-	200 mV @ 100 nA	13pF @ 10V	-	300 mW	125°C (TJ)	Surface Mount	SC-74A, SOT-753	SMV	Details
2N5460 T-JFET P CHANNEL NTE Electronics, Inc	2,072	1.21000	Active	P-Channel	40 V	-	1 mA @ 15 V	-	750 mV @ 1 µA	7pF @ 15V	-	310 mW	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92	Details
2SK879-GR(TE85L,F) JFET N-CH 0.1W USM Toshiba Semiconductor and Storage	7,392	0.44000	Active	N-Channel	-	-	2.6 mA @ 10 V	-	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM	Details
2SK208-O(TE85L,F) JFET N-CH 50V SC59 Toshiba Semiconductor and Storage	4,367	0.52000	Active	N-Channel	50 V	-	600 µA @ 10 V	6.5 mA	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	Details
LS320 TO-92 3L BIFET AMPLIFIER - HIGH INPUT Z A Linear Integrated Systems, Inc.	1,005	6.63000	Active	P-Channel	-	20 V	-	25 mA	-	8pF @ 10V	-	200 mW	-55°C ~ 125°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92	Details
J111RL1G JFET N-CH 35V 0.35W TO92 onsemi	8,700	0.12000	Obsolete	N-Channel	35 V	-	20 mA @ 15 V	-	3 V @ 1 µA	-	30 Ohms	350 mW	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-92 (TO-226)	Details
LSK170B TO-92 3L LOW NOISE & CAPACITANCE, HIGH IN Linear Integrated Systems, Inc.	330	6.60000	Active	N-Channel	40 V	40 V	6 mA @ 10 V	10 mA	200 mV @ 1 nA	20pF @ 15V	-	400 mW	-55°C ~ 135°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92	Details
NTE460 JFET-P-CH AF AMP NTE Electronics, Inc	432	6.06000	Active	P-Channel	20 V	-	2 mA @ 10 V	-	-	20pF @ 10V	800 Ohms	300 mW	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72	Details
2N4392 PBFREE JFET N-CH 40V 1.8W TO-18 Central Semiconductor Corp	9,363	3.14000	Active	N-Channel	40 V	-	25 mA @ 20 V	-	2 V @ 1 nA	14pF @ 20V	60 Ohms	1.8 W	-65°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18	Details

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