Toshiba Semiconductor and Storage
JFET N-CH 0.1W USM
2SK879-GR(TE85L,F) is a Transistors - JFETs manufactured by Toshiba Semiconductor and Storage. JFET N-CH 0.1W USM. Key specifications: mounting type Surface Mount, operating temperature 125°C (TJ), package / case SC-70, SOT-323, power - max 100 mW.
In Stock: 7,392
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2.6 mA @ 10 V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 400 mV @ 100 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 8.2pF @ 10V |
| Resistance - RDS(On) | - |
| Power - Max | 100 mW |
| Operating Temperature | 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | USM |
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