| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTB6411ANG
MOSFET N-CH 100V 77A D2PAK
onsemi
|
4,010 | 1.60000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 77A (Tc) | 10V | 14mOhm @ 72A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3700 pF @ 25 V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
TK10A50W,S5X
X35 PB-F POWER MOSFET TRANSISTOR
Toshiba Semiconductor and Storage
|
152 | 2.01000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 30W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack | Details |
|
DMN6040SFDEQ-7
MOSFET N-CH 60V 5.3A 6UDFN
Diodes Incorporated
|
1,311 | 0.21620 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 5.3A (Ta) | 4.5V, 10V | 38mOhm @ 4.3A, 10V | 3V @ 250µA | 22.4 nC @ 10 V | ±20V | 1287 pF @ 25 V | - | 660mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-PowerUDFN | Details |
|
ISL9N304AS3ST
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
|
4,660 | 1.46000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 4.5mOhm @ 75A, 10V | 3V @ 250µA | 105 nC @ 10 V | ±20V | 4075 pF @ 15 V | - | 145W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
TK35A65W5,S5X
MOSFET N-CH 650V 35A TO220SIS
Toshiba Semiconductor and Storage
|
7,419 | 5.68260 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Ta) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack | Details |
|
IXTP60N10T
MOSFET N-CH 100V 60A TO220AB
IXYS
|
4,344 | 2.75000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 18mOhm @ 25A, 10V | 4.5V @ 50µA | 49 nC @ 10 V | ±30V | 2650 pF @ 25 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
IRLR110PBF
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
|
4,230 | 1.35000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1 nC @ 5 V | ±10V | 250 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
STD13N60DM2
MOSFET N-CH 600V 11A DPAK
STMicroelectronics
|
2,724 | 2.08000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 365mOhm @ 5.5A, 10V | 5V @ 250µA | 19 nC @ 10 V | ±25V | 730 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
NVTYS004N04CTWG
T6 40V N-CH SL IN LFPAK33
onsemi
|
3,666 | 0.91540 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 19A (Ta), 78A (Tc) | 10V | 4mOhm @ 20A, 10V | 3.5V @ 50µA | 19 nC @ 10 V | ±20V | 1210 pF @ 25 V | - | 3.2W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 | Details |
|
BSC012N06NSATMA1
MOSFET N-CH 60V 100A TSON-8
Infineon Technologies
|
1,395 | 4.59000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 36A (Ta), 306A (Tc) | 6V, 10V | 1.2mOhm @ 50A, 10V | 3.3V @ 147µA | 143 nC @ 10 V | ±20V | 11000 pF @ 30 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN | Details |
|
G26P04K
P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Goford Semiconductor
|
766 | 0.78000 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Tc) | 4.5V, 10V | 18mOhm @ 10A, 10V | 2.5V @ 250µA | 42 nC @ 10 V | ±20V | - | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
BVSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
|
5,479 | 0.40000 | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 200mA (Ta) | 5V | 3.5Ohm @ 200mA, 5V | 1.5V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 | Details |
|
FQP13N06
MOSFET N-CH 60V 13A TO220-3
Fairchild Semiconductor
|
79,652 | 0.31000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Tc) | 10V | 135mOhm @ 6.5A, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±25V | 310 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
STF40N65M2
MOSFET N-CH 650V 32A TO220FP
STMicroelectronics
|
31 | 6.48000 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 99mOhm @ 16A, 10V | 4V @ 250µA | 56.5 nC @ 10 V | ±25V | 2355 pF @ 100 V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | Details |
|
APT10045B2LLG
MOSFET N-CH 1000V 23A T-MAX
Microchip Technology
|
4,685 | 33.62700 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | ±30V | 4350 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant | Details |
|
STF4N52K3
MOSFET N-CH 525V 2.5A TO220FP
STMicroelectronics
|
1,834 | 1.12000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 525 V | 2.5A (Tc) | 10V | 2.6Ohm @ 1.25A, 10V | 4.5V @ 50µA | 11 nC @ 10 V | ±30V | 334 pF @ 100 V | - | 20W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack | Details |
|
IXFR44N80P
MOSFET N-CH 800V 25A ISOPLUS247
IXYS
|
60 | 22.13000 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | 10V | 200mOhm @ 22A, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 | Details |
|
IXFH340N075T2
MOSFET N-CH 75V 340A TO247AD
IXYS
|
313 | 12.31000 | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 340A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 3mA | 300 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 | Details |
|
PMPB27EP,115
30 V, SINGLE P-CHANNEL TRENCH MO
Nexperia USA Inc.
|
22,762,580 | 0.11000 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6.1A (Ta) | 4.5V, 10V | 29mOhm @ 6.1A, 10V | 2.5V @ 250µA | 45 nC @ 10 V | ±20V | 1570 pF @ 15 V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad | Details |
|
SQM35N30-97_GE3
MOSFET N-CH 300V 35A TO263
Vishay Siliconix
|
1,453 | 4.02000 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 35A (Tc) | 10V | 97mOhm @ 10A, 10V | 3.5V @ 250µA | 130 nC @ 10 V | ±20V | 5650 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
NTBS9D0N10MC
MOSFET N-CH 100V 14A/60A TO263
onsemi
|
5,051 | 3.07000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Ta), 60A (Tc) | 6V, 10V | 9mOhm @ 23A, 10V | 4V @ 131µA | 23 nC @ 10 V | ±20V | 1695 pF @ 50 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
NVTFS5C460NLWFTAG
MOSFET N-CH 40V 19A/74A 8WDFN
onsemi
|
3,374 | 0.90950 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 19A (Ta), 74A (Tc) | 4.5V, 10V | 4.8mOhm @ 35A, 10V | 2V @ 40µA | 11 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN | Details |
|
FDD6030L
MOSFET N-CH 30V 12A/50A DPAK
onsemi
|
9 | 1.72000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 50A (Tc) | 4.5V, 10V | 14.5mOhm @ 12A, 10V | 3V @ 250µA | 28 nC @ 5 V | ±20V | 1230 pF @ 15 V | - | 3.2W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
SUP90N06-6M0P-E3
MOSFET N-CH 60V 90A TO220AB
Vishay Siliconix
|
9,890 | 3.29000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 6mOhm @ 20A, 10V | 4.5V @ 250µA | 120 nC @ 10 V | ±20V | 4700 pF @ 30 V | - | 3.75W (Ta), 272W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
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