| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STL13N65M2
MOSFET N-CH 650V 6.5A POWERFLAT
STMicroelectronics
|
6,596 | 1.14050 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6.5A (Tc) | 10V | 475mOhm @ 3A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 590 pF @ 100 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) HV | 8-PowerVDFN | Details |
|
NTHS5404T1G
MOSFET N-CH 20V 5.2A CHIPFET
onsemi
|
30,000 | 1.08000 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 5.2A (Ta) | 2.5V, 4.5V | 30mOhm @ 5.2A, 4.5V | 600mV @ 250µA (Min) | 18 nC @ 4.5 V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET™ | 8-SMD, Flat Lead | Details |
|
TPH3R506PL,LQ
MOSFET N-CH 60V 94A 8SOP
Toshiba Semiconductor and Storage
|
6,409 | 0.50050 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 94A (Tc) | 4.5V, 10V | 3.5mOhm @ 47A, 10V | 2.5V @ 500µA | 55 nC @ 10 V | ±20V | 4420 pF @ 30 V | - | 830mW (Ta), 116W (Tc) | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN | Details |
|
SIHP4N80E-GE3
MOSFET N-CH 800V 4.3A TO220AB
Vishay Siliconix
|
1,275 | 1.10550 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 | Details |
|
IXFT150N25X3HV
MOSFET N-CH 250V 150A TO268HV
IXYS
|
5,429 | 26.59000 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 150A (Tc) | 10V | 9mOhm @ 75A, 10V | 4.5V @ 4mA | 154 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV (IXFT) | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | Details |
|
RJK0213DPA-00#J53
N-CHANNEL POWER MOSFET
Renesas Electronics America Inc
|
111,000 | 1.01000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
IRFP048NPBF
IRFP048 - 12V-300V N-CHANNEL POW
Infineon Technologies
|
44,045 | 0.65000 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 16mOhm @ 37A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 | Details |
|
IPB120N08S403ATMA1
MOSFET N-CH 80V 120A TO263-3
Infineon Technologies
|
7,437 | 4.44740 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 2.5mOhm @ 100A, 10V | 4V @ 223µA | 167 nC @ 10 V | ±20V | 11550 pF @ 25 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
STP5N105K5
MOSFET N-CH 1050V 3A TO220
STMicroelectronics
|
2,827 | 2.98000 | Active | N-Channel | MOSFET (Metal Oxide) | 1050 V | 3A (Tc) | 10V | 3.5Ohm @ 1.5A, 10V | 5V @ 100µA | 12.5 nC @ 10 V | ±30V | 210 pF @ 100 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
APT6017LFLLG
MOSFET N-CH 600V 35A TO264
Microsemi Corporation
|
15 | 19.00000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 170mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA | Details |
|
PJD12P06-AU_L2_000A1
60V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
|
6,711 | 0.99000 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.6A (Ta), 12A (Tc) | 10V | 155mOhm @ 6A, 10V | 4V @ 250µA | 10.9 nC @ 10 V | ±20V | 385 pF @ 25 V | - | 2W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
IXTA44P15T
MOSFET P-CH 150V 44A TO263
IXYS
|
194 | 7.10000 | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 44A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 250µA | 175 nC @ 10 V | ±15V | 13400 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
SIHK065N60E-T1-GE3
E SERIES POWER MOSFET POWERPAK 1
Vishay Siliconix
|
4,738 | 7.96000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 68mOhm @ 15A, 10V | 5V @ 250µA | 72 nC @ 10 V | ±30V | 2946 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK®10 x 12 | 8-PowerBSFN | Details |
|
MSC040SMA120J
SICFET N-CH 1200V 53A SOT227
Microchip Technology
|
9,160 | 37.15000 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 53A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.8V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC | Details |
|
AONS66923
MOSFET N-CH 100V 15A/47A 8DFN
Alpha & Omega Semiconductor Inc.
|
4,701 | 1.57000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Ta), 47A (Tc) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.6V @ 250µA | 35 nC @ 10 V | ±20V | 1725 pF @ 50 V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads | Details |
|
STL2N80K5
MOSFET N-CH 800V 2A POWERFLAT
STMicroelectronics
|
1,898 | 1.70000 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 4.9Ohm @ 1A, 10V | 5V @ 100µA | 3 nC @ 10 V | ±30V | 95 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN | Details |
|
PMV13XNEAR
PMV13XNEA - 20 V, N-CHANNEL TREN
Nexperia USA Inc.
|
389 | 0.41000 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 7.3A (Ta) | 2.5V, 8V | 15mOhm @ 7.3A, 8V | 1.3V @ 250µA | 15 nC @ 4.5 V | ±12V | 931 pF @ 10 V | - | 610mW (Ta), 8.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 | Details |
|
NTMFS7D8N10GTWG
N-CHANNEL SHIELDED GATE POWERTRE
onsemi
|
2,925 | 3.76000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Ta), 110A (Tc) | 10V | 7.6mOhm @ 48A, 10V | 4V @ 254µA | 92 nC @ 10 V | ±20V | 6180 pF @ 50 V | - | 3W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN | Details |
|
IRLZ44NSTRLPBF
MOSFET N-CH 55V 47A D2PAK
Infineon Technologies
|
4,018 | 1.66000 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 47A (Tc) | 4V, 10V | 22mOhm @ 25A, 10V | 2V @ 250µA | 48 nC @ 5 V | ±16V | 1700 pF @ 25 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
STB30NF10T4
MOSFET N-CH 100V 35A D2PAK
STMicroelectronics
|
6,992 | 2.24000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 45mOhm @ 15A, 10V | 4V @ 250µA | 55 nC @ 10 V | ±20V | 1180 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
IRF7420TRPBF
MOSFET P-CH 12V 11.5A 8SO
Infineon Technologies
|
3,738 | 1.32000 | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 12 V | 11.5A (Tc) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38 nC @ 4.5 V | ±8V | 3529 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) | Details |
|
RFD3055LE
MOSFET N-CH 60V 11A IPAK
onsemi
|
6,533 | 1.02000 | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Tc) | 5V | 107mOhm @ 8A, 5V | 3V @ 250µA | 11.3 nC @ 10 V | ±16V | 350 pF @ 25 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
AON7458
MOSFET N-CH 250V 1.5A/5A 8DFN
Alpha & Omega Semiconductor Inc.
|
7,715 | 0.23550 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 1.5A (Ta), 5A (Tc) | 10V | 560mOhm @ 1.5A, 10V | 4.3V @ 250µA | 7.2 nC @ 10 V | ±30V | 370 pF @ 25 V | - | 3.1W (Ta), 33W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-PowerVDFN | Details |
|
IRFW640BTM
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
|
2,753 | 0.34000 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 9A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 1700 pF @ 25 V | - | 3.13W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
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