| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N649-1
DIODE GEN PURP 600V 400MA DO35
Microchip Technology
|
15 | 2.37000 | Active | Standard | 600 V | 400mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C | Details |
|
TSSA5U50 E3G
DIODE SCHOTTKY 50V 5A DO214AC
Taiwan Semiconductor Corporation
|
2,806 | 0.35170 | Active | Schottky | 50 V | 5A | 540 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 50 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
|
BYM10-50HE3/97
DIODE GEN PURP 50V 1A DO213AB
Vishay General Semiconductor - Diodes Division
|
5,536 | 0.13600 | Active | Standard | 50 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C | Details |
|
SD101AW-G3-18
DIODE SCHOTTKY 400MW 60V SOD123
Vishay General Semiconductor - Diodes Division
|
2,562 | 0.05980 | Active | Schottky | 60 V | 30mA (DC) | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | 1 ns | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 125°C | Details |
|
VS-SD1553C25S30K
DIODE GP 2.5KV 1650A DO200AC
Vishay General Semiconductor - Diodes Division
|
3,716 | 344.08000 | Active | Standard | 2500 V | 1650A | 2.6 V @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 75 mA @ 2500 V | - | Clamp On | DO-200AC, K-PUK | DO-200AC, K-PUK | - | Details |
|
JANTXV1N4247/TR
RECTIFIER UFR,FRR
Microchip Technology
|
9,821 | 8.71500 | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | Through Hole | A, Axial | - | -65°C ~ 175°C | Details |
|
1N4148WS-G3-18
DIODE GEN PURP 75V 150MA SOD323
Vishay General Semiconductor - Diodes Division
|
30,000 | 0.30000 | Active | Standard | 75 V | 150mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 100 µA @ 100 V | - | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C | Details |
|
SD103AWS-HE3-18
DIODE SCHOTTKY 350MA 40V SOD323
Vishay General Semiconductor - Diodes Division
|
4,566 | 0.42000 | Active | Schottky | 40 V | 350mA (DC) | 600 mV @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 10 ns | 5 µA @ 30 V | 50pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 125°C | Details |
|
IDL10G65C5XUMA2
DIODE SCHOTTKY 650V 10A VSON-4
Infineon Technologies
|
6,752 | 5.39000 | Active | Silicon Carbide Schottky | 650 V | 10A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C | Details |
|
SL36PL-TP
DIODE SCHOTTKY 3A 60V SOD-123FL
Micro Commercial Co
|
13,157 | 0.43000 | Active | Schottky | 60 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 150°C | Details |
|
NRVB0530T1G
DIODE SCHOTTKY 30V 500MA SOD123
onsemi
|
4,620 | 0.41000 | Active | Schottky | 30 V | 500mA | 430 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 130 µA @ 30 V | - | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 125°C | Details |
|
VS-HFA25TB60-M3
DIODE FRED 600V 25A TO220AC
Vishay General Semiconductor - Diodes Division
|
614 | 1.96000 | Active | Standard | 600 V | 25A | 2 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 20 µA @ 600 V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C | Details |
|
RS1K
DIODE GEN PURP 800V 1A SMA
SMC Diode Solutions
|
35,007 | 0.28000 | Active | Standard | 800 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -65°C ~ 150°C | Details |
|
HS1DL RVG
DIODE GEN PURP 200V 1A SUB SMA
Taiwan Semiconductor Corporation
|
1,800 | 0.65000 | Active | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 20pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C | Details |
|
VS-ETH1506STRL-M3
DIODE GEN PURP 600V 15A TO263AB
Vishay General Semiconductor - Diodes Division
|
7,397 | 0.94610 | Active | Standard | 600 V | 15A | 2.45 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 15 µA @ 600 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C | Details |
|
JANS1N5615
DIODE GEN PURP 200V 1A AXIAL
Microchip Technology
|
9 | 54.64000 | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C | Details |
|
1N5625-TR
DIODE AVALANCHE 400V 3A SOD64
Vishay General Semiconductor - Diodes Division
|
10,994 | 1.05000 | Active | Avalanche | 400 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 1 µA @ 400 V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C | Details |
|
MRA4006T3G
DIODE GEN PURP 800V 1A SMA
onsemi
|
220,474 | 0.41000 | Active | Standard | 800 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 175°C | Details |
|
RJU60C3TDPP-EJ#T2
RECTIFIER, 1 PHASE, 10A, 600V V(
Renesas Electronics America Inc
|
2,734 | 2.00000 | Active | Standard | 600 V | 10A | 2.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 1 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) | Details |
|
1N4735AT9-E
RECTIFIER DIODE
Renesas Electronics America Inc
|
10,000 | 0.20000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
LS103A-GS18
DIODE SCHOTTKY 40V 15A SOD80
Vishay General Semiconductor - Diodes Division
|
2,907 | 0.06970 | Active | Schottky | 40 V | - | 600 mV @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 10 ns | 5 µA @ 30 V | 50pF @ 0V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | 125°C (Max) | Details |
|
SK13
SCHOTTKY SMA 30V 1A
Diotec Semiconductor
|
7,500 | 0.05070 | Active | Schottky | 30 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | - | Surface Mount | DO-214AC, SMA | DO-214AC, SMA | -50°C ~ 150°C | Details |
|
SS2060LHE_R1_00001
SOD-123HE, SKY
Panjit International Inc.
|
3,190 | 0.43000 | Active | Schottky | 60 V | 2A | 670 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | 230pF @ 0V, 1MHz | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C | Details |
|
BAV3004W_R1_00001
SOD-123, SWITCHING
Panjit International Inc.
|
242 | 0.26000 | Active | Standard | 350 V | 200mA (DC) | 1.25 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 240 V | 1pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 150°C | Details |
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