Toshiba Semiconductor and Storage
D-IGBT TO-247 VCES=1350V IC=30A
GT30N135SRA,S1E is a Transistors - IGBTs - Single manufactured by Toshiba Semiconductor and Storage. D-IGBT TO-247 VCES=1350V IC=30A. Key specifications: mounting type Through Hole, operating temperature 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 60 A.
In Stock: 68
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 60A |
| Power - Max | 348 W |
| Switching Energy | -, 1.3mJ (off) |
| Input Type | Standard |
| Gate Charge | 270 nC |
| Td (on/off) @ 25°C | - |
| Test Condition | 300V, 60A, 39Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
Submit your RFQ for GT30N135SRA,S1E and get a quote within 24 hours.
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