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FGH80N60FD2TU - onsemi - Transistors - IGBTs - Single

FGH80N60FD2TU

onsemi

IGBT 600V 80A 290W TO247

FGH80N60FD2TU is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 600V 80A 290W TO247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 80 A.

In Stock: 2,619

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeField Stop
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)160 A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 40A
Power - Max290 W
Switching Energy1mJ (on), 520µJ (off)
Input TypeStandard
Gate Charge120 nC
Td (on/off) @ 25°C21ns/126ns
Test Condition400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)61 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Frequently Asked Questions

FGH80N60FD2TU is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 600V 80A 290W TO247

The mounting type of FGH80N60FD2TU is Through Hole.

The operating temperature range of FGH80N60FD2TU is -55°C ~ 150°C (TJ).

The package type of FGH80N60FD2TU is TO-247-3.

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