INSULATED GATE BIPOLAR TRANSISTO
FGB7N60UNDF is a Transistors - IGBTs - Single manufactured by Fairchild Semiconductor. INSULATED GATE BIPOLAR TRANSISTO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 14 A.
In Stock: 994
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 14 A |
| Current - Collector Pulsed (Icm) | 21 A |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 7A |
| Power - Max | 83 W |
| Switching Energy | 99µJ (on), 104µJ (off) |
| Input Type | Standard |
| Gate Charge | 18 nC |
| Td (on/off) @ 25°C | 5.9ns/32.3ns |
| Test Condition | 400V, 7A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 32.3 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK (TO-263) |
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3J LIMITED
