TRENCH GATE FIELD-STOP IGBT, M S
STGYA120M65DF2 is a Transistors - IGBTs - Single manufactured by STMicroelectronics. TRENCH GATE FIELD-STOP IGBT, M S. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3 Exposed Pad, current - collector (ic) (max) 160 A.
In Stock: 9,923
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | NPT, Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 160 A |
| Current - Collector Pulsed (Icm) | 360 A |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 120A |
| Power - Max | 625 W |
| Switching Energy | 1.8mJ (on), 4.41mJ (off) |
| Input Type | Standard |
| Gate Charge | 420 nC |
| Td (on/off) @ 25°C | 66ns/185ns |
| Test Condition | 400V, 120A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr) | 202 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Exposed Pad |
| Supplier Device Package | MAX247™ |
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