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STGWT60H65DFB - STMicroelectronics - Transistors - IGBTs - Single

STGWT60H65DFB

STMicroelectronics

IGBT 650V 80A 375W TO3P-3L

STGWT60H65DFB is a Transistors - IGBTs - Single manufactured by STMicroelectronics. IGBT 650V 80A 375W TO3P-3L. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 80 A.

In Stock: 1

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)240 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 60A
Power - Max375 W
Switching Energy1.09mJ (on), 626µJ (off)
Input TypeStandard
Gate Charge306 nC
Td (on/off) @ 25°C51ns/160ns
Test Condition400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr)60 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

Frequently Asked Questions

STGWT60H65DFB is a Transistors - IGBTs - Single manufactured by STMicroelectronics. IGBT 650V 80A 375W TO3P-3L

The mounting type of STGWT60H65DFB is Through Hole.

The operating temperature range of STGWT60H65DFB is -55°C ~ 175°C (TJ).

The package type of STGWT60H65DFB is TO-3P-3, SC-65-3.

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