TRENCH GATE FIELD-STOP 650 V, 20
STGB20H65DFB2 is a Transistors - IGBTs - Single manufactured by STMicroelectronics. TRENCH GATE FIELD-STOP 650 V, 20. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA, current - collector (ic) (max) 40 A.
In Stock: 80
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A |
| Power - Max | 147 W |
| Switching Energy | 265µJ (on), 214µJ (off) |
| Input Type | Standard |
| Gate Charge | 56 nC |
| Td (on/off) @ 25°C | 16ns/78.8ns |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 215 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Supplier Device Package | D2PAK-3 |
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