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RJP60F5DPK-01#T0 - Renesas Electronics America Inc - Transistors - IGBTs - Single

RJP60F5DPK-01#T0

Renesas Electronics America Inc

IGBT 600V 80A 260.4W

RJP60F5DPK-01#T0 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. IGBT 600V 80A 260.4W. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3 Full Pack, current - collector (ic) (max) 80 A.

In Stock: 114

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)160 A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 40A
Power - Max260.4 W
Switching Energy-
Input TypeStandard
Gate Charge74 nC
Td (on/off) @ 25°C53ns/90ns
Test Condition400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-3P

Frequently Asked Questions

RJP60F5DPK-01#T0 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. IGBT 600V 80A 260.4W

The mounting type of RJP60F5DPK-01#T0 is Through Hole.

The operating temperature range of RJP60F5DPK-01#T0 is 150°C (TJ).

The package type of RJP60F5DPK-01#T0 is TO-220-3 Full Pack.

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