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RJP60F4DPM-00#T1 - Renesas Electronics America Inc - Transistors - IGBTs - Single

RJP60F4DPM-00#T1

Renesas Electronics America Inc

IGBT 600V 60A 41.2W TO-3PFM

RJP60F4DPM-00#T1 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. IGBT 600V 60A 41.2W TO-3PFM. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3 Full Pack, current - collector (ic) (max) 60 A.

In Stock: 88

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic1.82V @ 15V, 30A
Power - Max41.2 W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C45ns/70ns
Test Condition400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-3PFM

Frequently Asked Questions

RJP60F4DPM-00#T1 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. IGBT 600V 60A 41.2W TO-3PFM

The mounting type of RJP60F4DPM-00#T1 is Through Hole.

The operating temperature range of RJP60F4DPM-00#T1 is 150°C (TJ).

The package type of RJP60F4DPM-00#T1 is TO-220-3 Full Pack.

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