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RJH60D7BDPQ-E0#T2 - Renesas Electronics America Inc - Transistors - IGBTs - Single

RJH60D7BDPQ-E0#T2

Renesas Electronics America Inc

IGBT 600V 90A 300W TO-247

RJH60D7BDPQ-E0#T2 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. IGBT 600V 90A 300W TO-247. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 90 A.

In Stock: 43

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)90 A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 50A
Power - Max300 W
Switching Energy700µJ (on), 1.4mJ (off)
Input TypeStandard
Gate Charge125 nC
Td (on/off) @ 25°C60ns/180ns
Test Condition300V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)25 ns
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

Frequently Asked Questions

RJH60D7BDPQ-E0#T2 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. IGBT 600V 90A 300W TO-247

The mounting type of RJH60D7BDPQ-E0#T2 is Through Hole.

The operating temperature range of RJH60D7BDPQ-E0#T2 is 150°C (TJ).

The package type of RJH60D7BDPQ-E0#T2 is TO-247-3.

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