RJH1DF7 - INSULATED GATE BIPOLAR
RJH1DF7RDPQ-80#T2 is a Transistors - IGBTs - Single manufactured by Renesas. RJH1DF7 - INSULATED GATE BIPOLAR. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 60 A.
In Stock: 400
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | - |
| Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 35A |
| Power - Max | 250 W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | 58ns/144ns |
| Test Condition | 600V, 35A, 5Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
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3J LIMITED
