INSULATED GATE BIPOLAR TRANSISTO
NGB8207BNT4G is a Transistors - IGBTs - Single manufactured by onsemi. INSULATED GATE BIPOLAR TRANSISTO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 20 A.
In Stock: 800
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 365 V |
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 50 A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 4V, 20A |
| Power - Max | 165 W |
| Switching Energy | - |
| Input Type | Logic |
| Gate Charge | - |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
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3J LIMITED
