IGBT 1200V 21A 167W TO220AB
HGTP5N120BND is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 1200V 21A 167W TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 21 A.
In Stock: 1,184
| Attribute | Value |
|---|---|
| Product Status | Not For New Designs |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 21 A |
| Current - Collector Pulsed (Icm) | 40 A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 5A |
| Power - Max | 167 W |
| Switching Energy | 450µJ (on), 390µJ (off) |
| Input Type | Standard |
| Gate Charge | 53 nC |
| Td (on/off) @ 25°C | 22ns/160ns |
| Test Condition | 960V, 5A, 25Ohm, 15V |
| Reverse Recovery Time (trr) | 65 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
Submit your RFQ for HGTP5N120BND and get a quote within 24 hours.
3J LIMITED
