IGBT 1200V 5.3A 60W TO252AA
HGTD1N120BNS9A is a Transistors - IGBTs - Single manufactured by onsemi. IGBT 1200V 5.3A 60W TO252AA. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 5.3 A.
In Stock: 4,275
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 5.3 A |
| Current - Collector Pulsed (Icm) | 6 A |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 1A |
| Power - Max | 60 W |
| Switching Energy | 70µJ (on), 90µJ (off) |
| Input Type | Standard |
| Gate Charge | 14 nC |
| Td (on/off) @ 25°C | 15ns/67ns |
| Test Condition | 960V, 1A, 82Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA |
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