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FGA60N65SMD - onsemi - Transistors - IGBTs - Single

FGA60N65SMD

onsemi

IGBT FIELD STOP 650V 120A TO3P

FGA60N65SMD is a Transistors - IGBTs - Single manufactured by onsemi. IGBT FIELD STOP 650V 120A TO3P. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 120 A.

In Stock: 87

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeField Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)120 A
Current - Collector Pulsed (Icm)180 A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 60A
Power - Max600 W
Switching Energy1.54mJ (on), 450µJ (off)
Input TypeStandard
Gate Charge189 nC
Td (on/off) @ 25°C18ns/104ns
Test Condition400V, 60A, 3Ohm, 15V
Reverse Recovery Time (trr)47 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

Frequently Asked Questions

FGA60N65SMD is a Transistors - IGBTs - Single manufactured by onsemi. IGBT FIELD STOP 650V 120A TO3P

The mounting type of FGA60N65SMD is Through Hole.

The operating temperature range of FGA60N65SMD is -55°C ~ 175°C (TJ).

The package type of FGA60N65SMD is TO-3P-3, SC-65-3.

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