IGBT - 650 V 100 A FS3 FOR EV TR
AFGY100T65SPD is a Transistors - IGBTs - Single manufactured by onsemi. IGBT - 650 V 100 A FS3 FOR EV TR. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 120 A.
In Stock: 5
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 120 A |
| Current - Collector Pulsed (Icm) | 300 A |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 100A |
| Power - Max | 660 W |
| Switching Energy | 5.1mJ (on), 2.7mJ (off) |
| Input Type | Standard |
| Gate Charge | 109 nC |
| Td (on/off) @ 25°C | 36ns/78ns |
| Test Condition | 400V, 100A, 5Ohm, 15V |
| Reverse Recovery Time (trr) | 105 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
Submit your RFQ for AFGY100T65SPD and get a quote within 24 hours.
3J LIMITED
