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BFU730F,115 - NXP USA Inc. - Transistors - Bipolar (BJT) - RF

BFU730F,115

NXP USA Inc.

RF TRANS NPN 2.8V 55GHZ 4DFP

BFU730F,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 2.8V 55GHZ 4DFP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-343F, current - collector (ic) (max) 30mA.

In Stock: 107,998

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)2.8V
Frequency - Transition55GHz
Noise Figure (dB Typ @ f)0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
Gain-
Power - Max197mW
DC Current Gain (hFE) (Min) @ Ic, Vce205 @ 2mA, 2V
Current - Collector (Ic) (Max)30mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device Package4-DFP

Frequently Asked Questions

BFU730F,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 2.8V 55GHZ 4DFP

The mounting type of BFU730F,115 is Surface Mount.

The operating temperature range of BFU730F,115 is 150°C (TJ).

The package type of BFU730F,115 is SOT-343F.

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