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BFU730LXZ - NXP USA Inc. - Transistors - Bipolar (BJT) - RF

BFU730LXZ

NXP USA Inc.

RF TRANS NPN 3V 53GHZ 3DFN1006

BFU730LXZ is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 3V 53GHZ 3DFN1006. Key specifications: mounting type Surface Mount, package / case 3-XFDFN, current - collector (ic) (max) 30mA, power - max 160mW.

In Stock: 7,418

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)3V
Frequency - Transition53GHz
Noise Figure (dB Typ @ f)0.75dB @ 6GHz
Gain15.8dB
Power - Max160mW
DC Current Gain (hFE) (Min) @ Ic, Vce205 @ 2mA, 3V
Current - Collector (Ic) (Max)30mA
Operating Temperature-
Mounting TypeSurface Mount
Package / Case3-XFDFN
Supplier Device PackageDFN1006C-3

Frequently Asked Questions

BFU730LXZ is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 3V 53GHZ 3DFN1006

The mounting type of BFU730LXZ is Surface Mount.

The package type of BFU730LXZ is 3-XFDFN.

The current rating of BFU730LXZ is 30mA.

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