RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
BFU660F,115 - NXP USA Inc. - Transistors - Bipolar (BJT) - RF

BFU660F,115

NXP USA Inc.

RF TRANS NPN 5.5V 21GHZ 4DFP

BFU660F,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 5.5V 21GHZ 4DFP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-343F, current - collector (ic) (max) 60mA.

In Stock: 11,853

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5.5V
Frequency - Transition21GHz
Noise Figure (dB Typ @ f)0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Gain12dB ~ 21dB
Power - Max225mW
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 10mA, 2V
Current - Collector (Ic) (Max)60mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device Package4-DFP

Frequently Asked Questions

BFU660F,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 5.5V 21GHZ 4DFP

The mounting type of BFU660F,115 is Surface Mount.

The operating temperature range of BFU660F,115 is 150°C (TJ).

The package type of BFU660F,115 is SOT-343F.

Related Products

Manufacturers in Transistors - Bipolar (BJT) - RF

Need a Quote for This Part?

Submit your RFQ for BFU660F,115 and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.