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BFU725F/N1,115 - NXP USA Inc. - Transistors - Bipolar (BJT) - RF

BFU725F/N1,115

NXP USA Inc.

RF TRANS NPN 2.8V 55GHZ 4SO

BFU725F/N1,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 2.8V 55GHZ 4SO. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-343 Reverse Pinning, current - collector (ic) (max) 40mA.

In Stock: 7,199

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)2.8V
Frequency - Transition55GHz
Noise Figure (dB Typ @ f)0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
Gain10dB ~ 24dB
Power - Max136mW
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 10mA, 2V
Current - Collector (Ic) (Max)40mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-343 Reverse Pinning
Supplier Device Package4-SO

Frequently Asked Questions

BFU725F/N1,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 2.8V 55GHZ 4SO

The mounting type of BFU725F/N1,115 is Surface Mount.

The operating temperature range of BFU725F/N1,115 is 150°C (TJ).

The package type of BFU725F/N1,115 is SOT-343 Reverse Pinning.

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