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BFU630F,115 - NXP USA Inc. - Transistors - Bipolar (BJT) - RF

BFU630F,115

NXP USA Inc.

RF TRANS NPN 5.5V 21GHZ 4DFP

BFU630F,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 5.5V 21GHZ 4DFP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-343F, current - collector (ic) (max) 30mA.

In Stock: 8,980

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5.5V
Frequency - Transition21GHz
Noise Figure (dB Typ @ f)0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
Gain13dB ~ 22.5dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 5mA, 2V
Current - Collector (Ic) (Max)30mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device Package4-DFP

Frequently Asked Questions

BFU630F,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 5.5V 21GHZ 4DFP

The mounting type of BFU630F,115 is Surface Mount.

The operating temperature range of BFU630F,115 is 150°C (TJ).

The package type of BFU630F,115 is SOT-343F.

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