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APT50GT120B2RDLG - Microsemi Corporation - Transistors - IGBTs - Single

APT50GT120B2RDLG

Microsemi Corporation

IGBT 1200V 106A 694W TO-247

APT50GT120B2RDLG is a Transistors - IGBTs - Single manufactured by Microsemi Corporation. IGBT 1200V 106A 694W TO-247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3 Variant, current - collector (ic) (max) 106 A.

In Stock: 8

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)106 A
Current - Collector Pulsed (Icm)150 A
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 50A
Power - Max694 W
Switching Energy3585µJ (on), 1910µJ (off)
Input TypeStandard
Gate Charge240 nC
Td (on/off) @ 25°C23ns/215ns
Test Condition800V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

Frequently Asked Questions

APT50GT120B2RDLG is a Transistors - IGBTs - Single manufactured by Microsemi Corporation. IGBT 1200V 106A 694W TO-247

The mounting type of APT50GT120B2RDLG is Through Hole.

The operating temperature range of APT50GT120B2RDLG is -55°C ~ 150°C (TJ).

The package type of APT50GT120B2RDLG is TO-247-3 Variant.

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