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APT45GP120B2DQ2G - Microchip Technology - Transistors - IGBTs - Single

APT45GP120B2DQ2G

Microchip Technology

IGBT 1200V 113A 625W TMAX

APT45GP120B2DQ2G is a Transistors - IGBTs - Single manufactured by Microchip Technology. IGBT 1200V 113A 625W TMAX. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3 Variant, current - collector (ic) (max) 113 A.

In Stock: 30

Product Attributes

AttributeValue
Product StatusActive
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)113 A
Current - Collector Pulsed (Icm)170 A
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 45A
Power - Max625 W
Switching Energy900µJ (on), 905µJ (off)
Input TypeStandard
Gate Charge185 nC
Td (on/off) @ 25°C18ns/100ns
Test Condition600V, 45A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

Frequently Asked Questions

APT45GP120B2DQ2G is a Transistors - IGBTs - Single manufactured by Microchip Technology. IGBT 1200V 113A 625W TMAX

The mounting type of APT45GP120B2DQ2G is Through Hole.

The operating temperature range of APT45GP120B2DQ2G is -55°C ~ 150°C (TJ).

The package type of APT45GP120B2DQ2G is TO-247-3 Variant.

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