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APT33GF120B2RDQ2G - Microchip Technology - Transistors - IGBTs - Single

APT33GF120B2RDQ2G

Microchip Technology

IGBT 1200V 64A 357W TMAX

APT33GF120B2RDQ2G is a Transistors - IGBTs - Single manufactured by Microchip Technology. IGBT 1200V 64A 357W TMAX. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3 Variant, current - collector (ic) (max) 64 A.

In Stock: 30

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)64 A
Current - Collector Pulsed (Icm)75 A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 25A
Power - Max357 W
Switching Energy1.315mJ (on), 1.515mJ (off)
Input TypeStandard
Gate Charge170 nC
Td (on/off) @ 25°C14ns/185ns
Test Condition800V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

Frequently Asked Questions

APT33GF120B2RDQ2G is a Transistors - IGBTs - Single manufactured by Microchip Technology. IGBT 1200V 64A 357W TMAX

The mounting type of APT33GF120B2RDQ2G is Through Hole.

The operating temperature range of APT33GF120B2RDQ2G is -55°C ~ 150°C (TJ).

The package type of APT33GF120B2RDQ2G is TO-247-3 Variant.

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