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IXYP20N65C3D1M - IXYS - Transistors - IGBTs - Single

IXYP20N65C3D1M

IXYS

IGBT 650V 18A 50W TO220

IXYP20N65C3D1M is a Transistors - IGBTs - Single manufactured by IXYS. IGBT 650V 18A 50W TO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3, current - collector (ic) (max) 18 A.

In Stock: 9,279

Product Attributes

AttributeValue
Product StatusActive
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)18 A
Current - Collector Pulsed (Icm)105 A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Power - Max50 W
Switching Energy430µJ (on), 350µJ (off)
Input TypeStandard
Gate Charge30 nC
Td (on/off) @ 25°C19ns/80ns
Test Condition400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr)30 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Frequently Asked Questions

IXYP20N65C3D1M is a Transistors - IGBTs - Single manufactured by IXYS. IGBT 650V 18A 50W TO220

The mounting type of IXYP20N65C3D1M is Through Hole.

The operating temperature range of IXYP20N65C3D1M is -55°C ~ 175°C (TJ).

The package type of IXYP20N65C3D1M is TO-220-3.

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