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IXXX200N65B4 - IXYS - Transistors - IGBTs - Single

IXXX200N65B4

IXYS

IGBT 650V 370A 1150W PLUS247

IXXX200N65B4 is a Transistors - IGBTs - Single manufactured by IXYS. IGBT 650V 370A 1150W PLUS247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3 Variant, current - collector (ic) (max) 370 A.

In Stock: 8,507

Product Attributes

AttributeValue
Product StatusActive
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)370 A
Current - Collector Pulsed (Icm)1000 A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 160A
Power - Max1150 W
Switching Energy4.4mJ (on), 2.2mJ (off)
Input TypeStandard
Gate Charge553 nC
Td (on/off) @ 25°C62ns/245ns
Test Condition400V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device PackagePLUS247™-3

Frequently Asked Questions

IXXX200N65B4 is a Transistors - IGBTs - Single manufactured by IXYS. IGBT 650V 370A 1150W PLUS247

The mounting type of IXXX200N65B4 is Through Hole.

The operating temperature range of IXXX200N65B4 is -55°C ~ 175°C (TJ).

The package type of IXXX200N65B4 is TO-247-3 Variant.

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