ISSI, Integrated Silicon Solution Inc
18MB, QUAD (BURST OF 4), SYNC SR
IS61QDB451236A-250B4L is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. 18MB, QUAD (BURST OF 4), SYNC SR. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 1.71V ~ 1.89V, package / case 165-LBGA.
In Stock: 7,253
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Single Port, Synchronous, QDR II |
| Memory Size | 18Mbit |
| Memory Organization | 512K x 36 |
| Memory Interface | HSTL |
| Clock Frequency | 250 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 450 ps |
| Voltage - Supply | 1.71V ~ 1.89V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-LFBGA (13x15) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS61QDB41M18A-250M3LI | ISSI, Integrated Silicon Solution Inc | 18MB, QUAD (BURST OF 4), SYNC SR | 100% | View |
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| MT47H512M4EB-3:C | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 60FBGA | 85% | View |
| MT47H256M8EB-3:C TR | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 60FBGA | 85% | View |
| MT47H128M8HQ-3 L:G TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 60FBGA | 85% | View |
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