ISSI, Integrated Silicon Solution Inc
18MB, QUAD (BURST OF 4), SYNC SR
IS61QDB41M18A-250M3LI is a Memory manufactured by ISSI, Integrated Silicon Solution Inc. 18MB, QUAD (BURST OF 4), SYNC SR. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.71V ~ 1.89V, package / case 165-LBGA.
In Stock: 5,526
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Single Port, Synchronous, QDR II |
| Memory Size | 18Mbit |
| Memory Organization | 1M x 18 |
| Memory Interface | HSTL |
| Clock Frequency | 250 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 450 ps |
| Voltage - Supply | 1.71V ~ 1.89V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-LFBGA (15x17) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43DR16320E-3DBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 84TWBGA | 85% | View |
| IS43DR16160B-3DBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 84TWBGA | 85% | View |
| IS46DR16320D-3DBLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 84TWBGA | 85% | View |
| MT47H64M16HR-3 AAT:H TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 84FBGA | 85% | View |
| IS43DR86400D-3DBI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TWBGA | 85% | View |
| IS43DR86400C-3DBI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TWBGA | 85% | View |
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