IC DRAM 2GBIT PARALLEL 60FBGA
MT47H512M4EB-3:C is a Memory manufactured by Micron Technology Inc.. IC DRAM 2GBIT PARALLEL 60FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 60-TFBGA.
In Stock: 6,334
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 2Gb (512M x 4) |
| Memory Interface | Parallel |
| Clock Frequency | 333 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 450 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (9x11.5) |
MT47H512M4EB-3:C is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43DR16320E-3DBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 84TWBGA | 100% | View |
| IS43DR16160B-3DBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 84TWBGA | 100% | View |
| IS43DR16128B-3DBL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 84TWBGA | 100% | View |
| MT47H128M8CF-3:H | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 60FBGA | 100% | View |
| MT47H128M4CB-3:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | 100% | View |
| IS43DR86400C-3DBI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TWBGA | 100% | View |
Submit your RFQ for MT47H512M4EB-3:C and get a quote within 24 hours.
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