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HGTP7N60B3D - Harris Corporation - Transistors - IGBTs - Single

HGTP7N60B3D

Harris Corporation

IGBT, 14A, 600V, N-CHANNEL, TO-2

HGTP7N60B3D is a Transistors - IGBTs - Single manufactured by Harris Corporation. IGBT, 14A, 600V, N-CHANNEL, TO-2. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 14 A.

In Stock: 17,365

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)14 A
Current - Collector Pulsed (Icm)56 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 7A
Power - Max60 W
Switching Energy160µJ (on), 120µJ (off)
Input TypeStandard
Gate Charge37 nC
Td (on/off) @ 25°C26ns/130ns
Test Condition480V, 7A, 50Ohm, 15V
Reverse Recovery Time (trr)37 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Frequently Asked Questions

HGTP7N60B3D is a Transistors - IGBTs - Single manufactured by Harris Corporation. IGBT, 14A, 600V, N-CHANNEL, TO-2

The mounting type of HGTP7N60B3D is Through Hole.

The operating temperature range of HGTP7N60B3D is -55°C ~ 150°C (TJ).

The package type of HGTP7N60B3D is TO-220-3.

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