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HGTP10N50E1D - Harris Corporation - Transistors - IGBTs - Single

HGTP10N50E1D

Harris Corporation

17.5A, 500V, N-CHANNEL IGBT

HGTP10N50E1D is a Transistors - IGBTs - Single manufactured by Harris Corporation. 17.5A, 500V, N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 17.5 A.

In Stock: 3,712

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)500 V
Current - Collector (Ic) (Max)17.5 A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic3.2V @ 20V, 17.5A
Power - Max75 W
Switching Energy-
Input TypeStandard
Gate Charge19 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

Frequently Asked Questions

HGTP10N50E1D is a Transistors - IGBTs - Single manufactured by Harris Corporation. 17.5A, 500V, N-CHANNEL IGBT

The mounting type of HGTP10N50E1D is Through Hole.

The operating temperature range of HGTP10N50E1D is -55°C ~ 150°C (TJ).

The package type of HGTP10N50E1D is TO-220-3.

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