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HGTG34N100E2 - Harris Corporation - Transistors - IGBTs - Single

HGTG34N100E2

Harris Corporation

55A, 1000V N-CHANNEL IGBT

HGTG34N100E2 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 55A, 1000V N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 55 A.

In Stock: 1,350

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector (Ic) (Max)55 A
Current - Collector Pulsed (Icm)200 A
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 34A
Power - Max208 W
Switching Energy-
Input TypeStandard
Gate Charge240 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

Frequently Asked Questions

HGTG34N100E2 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 55A, 1000V N-CHANNEL IGBT

The mounting type of HGTG34N100E2 is Through Hole.

The operating temperature range of HGTG34N100E2 is -55°C ~ 150°C (TJ).

The package type of HGTG34N100E2 is TO-247-3.

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