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HGTG30N60B3 - Harris Corporation - Transistors - IGBTs - Single

HGTG30N60B3

Harris Corporation

600 V, NPT IGBT

HGTG30N60B3 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 600 V, NPT IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 60 A.

In Stock: 16,303

Product Attributes

AttributeValue
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)220 A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 30A
Power - Max208 W
Switching Energy500µJ (on), 680µJ (off)
Input TypeStandard
Gate Charge170 nC
Td (on/off) @ 25°C36ns/137ns
Test Condition480V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

Frequently Asked Questions

HGTG30N60B3 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 600 V, NPT IGBT

The mounting type of HGTG30N60B3 is Through Hole.

The operating temperature range of HGTG30N60B3 is -55°C ~ 150°C (TJ).

The package type of HGTG30N60B3 is TO-247-3.

Yes, HGTG30N60B3 is listed as Obsolete. Consider requesting a quote for alternative parts.

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