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HGTG27N60C3DR - Harris Corporation - Transistors - IGBTs - Single

HGTG27N60C3DR

Harris Corporation

UFS SERIES N-CHANNEL IGBT

HGTG27N60C3DR is a Transistors - IGBTs - Single manufactured by Harris Corporation. UFS SERIES N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 54 A.

In Stock: 68

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)54 A
Current - Collector Pulsed (Icm)108 A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 27A
Power - Max208 W
Switching Energy-
Input TypeStandard
Gate Charge212 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

Frequently Asked Questions

HGTG27N60C3DR is a Transistors - IGBTs - Single manufactured by Harris Corporation. UFS SERIES N-CHANNEL IGBT

The mounting type of HGTG27N60C3DR is Through Hole.

The operating temperature range of HGTG27N60C3DR is -40°C ~ 150°C (TJ).

The package type of HGTG27N60C3DR is TO-247-3.

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