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HGTG12N60C3DR - Harris Corporation - Transistors - IGBTs - Single

HGTG12N60C3DR

Harris Corporation

UFS SERIES N-CHANNEL IGBT

HGTG12N60C3DR is a Transistors - IGBTs - Single manufactured by Harris Corporation. UFS SERIES N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 24 A.

In Stock: 659

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)24 A
Current - Collector Pulsed (Icm)48 A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 12A
Power - Max104 W
Switching Energy400µJ (on), 340µJ (off)
Input TypeStandard
Gate Charge71 nC
Td (on/off) @ 25°C37ns/120ns
Test Condition480V, 12A, 25Ohm, 15V
Reverse Recovery Time (trr)37 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

Frequently Asked Questions

HGTG12N60C3DR is a Transistors - IGBTs - Single manufactured by Harris Corporation. UFS SERIES N-CHANNEL IGBT

The mounting type of HGTG12N60C3DR is Through Hole.

The operating temperature range of HGTG12N60C3DR is -55°C ~ 150°C (TJ).

The package type of HGTG12N60C3DR is TO-247-3.

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