RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
HGTD10N50F1 - Harris Corporation - Transistors - IGBTs - Single

HGTD10N50F1

Harris Corporation

10A, 500V N-CHANNEL IGBT

HGTD10N50F1 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 10A, 500V N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA, current - collector (ic) (max) 12 A.

In Stock: 2,649

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)500 V
Current - Collector (Ic) (Max)12 A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.5V @ 10V, 5A
Power - Max75 W
Switching Energy-
Input TypeStandard
Gate Charge13.4 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

Frequently Asked Questions

HGTD10N50F1 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 10A, 500V N-CHANNEL IGBT

The mounting type of HGTD10N50F1 is Through Hole.

The operating temperature range of HGTD10N50F1 is -55°C ~ 150°C (TJ).

The package type of HGTD10N50F1 is TO-251-3 Short Leads, IPak, TO-251AA.

Related Products

Manufacturers in Transistors - IGBTs - Single

Need a Quote for This Part?

Submit your RFQ for HGTD10N50F1 and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.