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HGTB12N60D1C - Harris Corporation - Transistors - IGBTs - Single

HGTB12N60D1C

Harris Corporation

12A, 600V N-CHANNEL IGBT

HGTB12N60D1C is a Transistors - IGBTs - Single manufactured by Harris Corporation. 12A, 600V N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-5, current - collector (ic) (max) 12 A.

In Stock: 598

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)12 A
Current - Collector Pulsed (Icm)40 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max75 W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-5
Supplier Device PackageTO-220-5

Frequently Asked Questions

HGTB12N60D1C is a Transistors - IGBTs - Single manufactured by Harris Corporation. 12A, 600V N-CHANNEL IGBT

The mounting type of HGTB12N60D1C is Through Hole.

The operating temperature range of HGTB12N60D1C is -55°C ~ 150°C (TJ).

The package type of HGTB12N60D1C is TO-220-5.

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